You are not logged in Total: 7journals, 19,964articles Online
AccountAccount
Login / Register
Forgot Login?
 
Main menuMain menu
What's new
Journal list
Visiting ranking
Phrase ranking
Polls
About us
 
SearchSearch
 
Journal Site
Advanced Search
 

Home  >  Journal list  >  Journal of the Ceramic Society of Japan ( 2003 - 2007 )  >  Vol.113  No.1322 (October) (2005)  >  pp.700-702

Journal of the Ceramic Society of Japan ( 2003 - 2007 )
<<Previous article Vol.113  No.1322 (October) (2005)   pp.700 - 702 Next article>>

Pressure Response of Aluminum Nitride Thin Film Prepared on Silicon Substrates

Yasunobu OOISHI1), Hiroaki NOMA1), Kazushi KISHI1), Naohiro UENO1), Morito AKIYAMA1) and Toshihiro KAMOHARA1)
1) On-Site Sensing and Diagnosis Research Laboratory, National Institute of Advanced Industrial Science and Technology (AIST)

  Highly c-axis-oriented aluminum nitride (AlN) thin film sensor elements were prepared on silicon single crystal by rf magnetron sputtering technique. The sensor characteristics were evaluated under pressures of 0.1 to 1.6 MPa and frequency of 0.1 to 100 Hz at room temperature. The deviation from the linearity of charges with pressures for the AlN sensor was within 1.49% of a full scale at 1.6 MPa, which indicates a good linearity between 0.1 and 1.6 MPa. The AlN sensor showed a good flat frequency characteristic between 1 and 100 Hz. It is confirmed that the AlN thin film has a good possibility as a pressure sensor.



Keyword:
Pressure sensor, Thin film, Aluminum nitride, Piezoelectric

Received: July 01, 2005
Accepted: August 19, 2005 , Published online: October 01, 2005
Copyright (c) 2005 The Ceramic Society of Japan

PDFPDF file (J-STAGE)J-STAGEJ-STAGE


SPARC Japan

Terms of Use | Privacy Policy