You are not logged in Total: 7journals, 20,272articles Online
AccountAccount
Login / Register
Forgot Login?
 
Main menuMain menu
What's new
Journal list
Visiting ranking
Phrase ranking
Polls
About us
 
SearchSearch
 
Journal Site
Advanced Search
 

Home  >  Journal list  >  MATERIALS TRANSACTIONS  >  Vol.48  No.9 (2007)  >  pp.2419-2421

MATERIALS TRANSACTIONS
<<Previous article Vol.48  No.9 (2007)   pp.2419 - 2421 Next article>>

Molecular Dynamics Simulation of Thermal Conductivity of Silicon Thin Film

Haitao Wang1), Yibin Xu1), Masato Shimono2), Yoshihisa Tanaka3) and Masayoshi Yamazaki1)
1) Materials Database Station, National Institute for Materials Science
2) Computational Materials Science Center, National Institute for Materials Science
3) Composites and Coatings Center, National Institute for Materials Science


We computed the thermal conductivity of silicon single crystal thin film with a thickness of 25 nm–134 nm at room temperature by non-equilibrium molecular dynamics simulation. The thermal conductivity was shown to depend on the thickness of the film, and is markedly lower than that in bulk silicon. The phonon classical thermal conductivity theory, incorporating the Boltzmann transport equation, was used to establish a phonon scattering model for size dependence. The results show that boundary scattering is very strong for phonon transport in silicon thin film.


Keyword:
silicon thin film, thermal conductivity, molecular dynamics, Boltzmann transport equation, phonon boundary scattering

Received: April 23, 2007
Accepted: July 06, 2007 , Published online: August 25, 2007
Copyright (c) 2007 The Japan Institute of Metals

PDFPDF file (J-STAGE)J-STAGEJ-STAGE


SPARC Japan

Terms of Use | Privacy Policy