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Home  >  Journal list  >  MATERIALS TRANSACTIONS  >  Vol.49  No.6 (2008)  >  pp.1298-1302

MATERIALS TRANSACTIONS
<<Previous article Vol.49  No.6 (2008)   pp.1298 - 1302 Next article>>

TEM and HRTEM Observations of Microstructural Change of Silicon Single Crystal Scratched under Very Small Loading Forces by AFM

Makoto Takagi1), Kenji Onodera2), Akihito Matsumuro1), Hiroyuki Iwata3), Katsuhiro Sasaki4) and Hiroyasu Saka4)
1) Department of Mechanical Engineering, Aichi Institute of Technology
2) Graduate School, Aichi Institute of Technology
3) Department of Electrical and Electronics Engineering, Aichi Institute of Technology
4) Department of Quantum Engineering, Nagoya University


The microstructural change of the surface and the subsurface regions of a Si single crystal (Si(100)) after scratching tests under very small loading forces was investigated. First, the scratching tests were carried out using an atomic force microscope (AFM). Then, the profiles of those wear traces which were generated by the scratching tests were observed using a transmission electron microscope (TEM). TEM observations revealed that dislocations were activated in the sub-surface within less than 100 nm depth from the surface of the wear traces when the loading force was higher than 5 μN. When the loading force was higher than 20 μN, patches of amorphous Si was observed occasionally at the surface of the wear traces. High-resolution TEM (HRTEM) observations revealed that a dislocation introduced by the scratching test was a total dislocation with Burgers vector of 1⁄2⟨110⟩.


Keyword:
scratching test, atomic force microscope, transmission electron microscope, silicon single crystal, microstructural change, dislocation

Received: January 15, 2008
Accepted: March 27, 2008 , Published online: May 25, 2008
Copyright (c) 2008 The Japan Institute of Metals

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