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Home  >  Journal list  >  Journal of the Ceramic Society of Japan  >  Vol.117  No.1365 (May) (2009)  >  pp.555-557

Journal of the Ceramic Society of Japan
<<Previous article Vol.117  No.1365 (May) (2009)   pp.555 - 557 Next article>>

Electrical properties of Al2O3/La2O3/Al2O3 films using various tunnel oxide thicknesses for non-volatile memory device applications

Hyo June KIM1), Seung Yong CHA1) and Doo Jin CHOI1)
1) Department of Ceramic Engineering, Yonsei University

  The electrical properties (including memory windows and leakage current densities) of Al2O3/La2O3/Al2O3 (ALA) films equipped with 5 nm, 7.5 nm, and 10 nm tunnel oxide layer were investigated. The dielectric constants of all of the tunnel oxide films using Al2O3 were the same and the equivalent oxide thickness was dependent on film thickness. The optimized conditions were exhibited in the ALA films with a 5 nm tunnel oxide. The memory window of the ALA films using the 5 nm tunnel oxide was about 1.31 V in the program condition (11 V for 10 ms) and in the erase condition (-13 V for 100 ms). Measurement of the leakage current density showed that all of the films are sufficient for use with flash memory device.


Keyword:
SONOS, Memory window, Flash, High-k dielectrics, La2O3, MOCVD

Received: October 20, 2008
Accepted: April 16, 2009 , Published online: May 01, 2009
Copyright (c) 2009 The Ceramic Society of Japan

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