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Home  >  Journal list  >  Journal of the Ceramic Society of Japan  >  Vol.118  No.1374 (February) (2010)  >  pp.164-166

Journal of the Ceramic Society of Japan
<<Previous article Vol.118  No.1374 (February) (2010)   pp.164 - 166 Next article>>

Formation of thick cubic boron nitride films in noble gases

Tetsutaro OHORI1), Hiroki ASAMI1), Jun SHIRAHATA1), Tsuneo SUZUKI1), Tadachika NAKAYAMA1), Hisayuki SUEMATSU1) and Koichi NIIHARA1)
1) Extreme Energy-Density Research Institute, Nagaoka University of Technology

  A radio frequency magnetron sputtering method, specifically tailored for the deposition of thick, adherent cubic boron nitride (c-BN) thin films on silicon substrates, was developed. The surface morphology of the boron nitride thin films was changed by altering the noble gases (Kr, Ar, Ne, and He) in the chamber present during the sputtering. The sample prepared in the gas with He showed especially good adhesion. This method enabled us to grow a 1.7-μm-thick c-BN thin film on a Si(100) substrate in only rare gases at a low temperature for the first time. Fourier transform infrared spectroscopy (FT-IR) indicated that the fraction of sp3-bonded BN in the thick films was above 60%.


Keyword:
Cubic boron nitride film, Radio frequency magnetron sputtering, Noble gases, He

Received: September 07, 2009
Accepted: November 19, 2009 , Published online: February 01, 2010
Copyright (c) 2010 The Ceramic Society of Japan

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