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Photoluminescence around 1.54 μm from Er-containing ZnO at Room Temperature
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Zhen Zhou1)2), Takanao Komaki2), Atsushi Koizumi2), Toshitaka Komori2), Masahito Yoshino2), Masahiko Morinaga2), Yasufumi Fujiwara3) and Yoshikazu Takeda1)2)
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1) Venture Business Laboratory, Nagoya University
2) Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University
3) Department of Materials Science and Engineering, Graduate School of Engineering, Osaka University
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The photoluminescence (PL) around the wavelength of 1.54 μm from the Er-containing ZnO specimens was measured at room temperature by the indirect excitation of the He-Cd laser (325 nm). The PL intensity varied greatly with the Er concentration and the specimen preparation conditions as well. The specimens with the Er content of about 2.6 at%, sintered at 1623 K, and cooled quickly to room temperature in air showed the highest PL intensity at 1.534 μm. The local structure of the optically active Er centers in ZnO was also discussed, and the appropriate optically active center might be the Er ions existing in the grain boundaries.
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Keyword: ZnO, Er, sintering, photoluminescence (PL), electrical conductivity
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Received: January 06, 2004
Accepted: March 05, 2004 ,
Published online: June 24, 2005 |
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Copyright (c) 2005 The Japan Institute of Metals |
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