|
Electron Energy-loss Spectroscopy Characterization of ∼1 nm-thick Amorphous Film at Grain Boundary in Si-based Ceramics
|
Hui Gu1)
|
1) State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences
|
In many ceramic systems thin amorphous films of about 1 nm thickness often cover grain boundaries. These amorphous films play a key role not only in the formation of microstructures but also in the thermal-mechanical properties of ceramic materials. However, such thin amorphous layers could not be probed directly by an analytical electron beam. With the recent advances in spatially-resolved electron energy-loss spectroscopy technique, chemical and physical parameters of the thin films could be successfully derived using the “spectrum separation” approach. Basic characters and behaviors of variations for the inter-granular films are analyzed in a few silicon nitride (Si3N4) and silicon carbide (SiC) systems. The combined local chemical-structural information reveal new trends on microstructures and properties, and provides further insights in Si-based ceramic materials.
|
Keyword: silicon nitride, silicon carbide, grain boundary, inter-granular amorphous film, electron energy-loss spectroscopy (EELS)
|
Received: February 13, 2004
Accepted: April 22, 2004 ,
Published online: June 24, 2005 |
|
Copyright (c) 2005 The Japan Institute of Metals |
 PDF file (J-STAGE)
,  J-STAGE
|
|
Account
Main menu
Search
