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Home  >  Journal list  >  MATERIALS TRANSACTIONS  >  Vol.53  No.4 (2012)  >  pp.641-644

MATERIALS TRANSACTIONS
<<Previous article Vol.53  No.4 (2012)   pp.641 - 644 Next article>>

Temperature and Bias Voltage Dependencies of Spin Injection Signals for Co2FeAl0.5Si0.5/n-GaAs Schottky Tunnel Junction

Tatsuya Saito1), Nobuki Tezuka1) and Satoshi Sugimoto1)
1) Department of Materials Science, Graduate School of Engineering, Tohoku University

We investigated the temperature and bias voltage dependencies of spin injection signals for Co2FeAl0.5Si0.5 (CFAS)/n-GaAs schottky tunnel junction. Clear voltage change was observed at 10 K for the junction by 3 Terminal Hanle measurements. The maximum voltage change, ΔVMAX, was decreased with increasing temperature and observed up to 100 K. The estimated spin relaxation time, τ, was 290 ps at 10 K and was also decreased with increasing temperature. In addition, temperature dependency of τ was lower than that of ΔVMAX. The ΔVMAX was increased with increasing bias voltage, and the sign of ΔVMAX was reversed by opposite bias voltage direction. Moreover, bias dependency of ΔVMAX became insensitive with increasing temperature.


Keyword:
full-Heusler alloy, spin injection

Received: November 29, 2011
Accepted: January 10, 2012 , Published online: March 25, 2012
Copyright (c) 2012 The Japan Institute of Metals

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