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Home  >  Journal list  >  Journal of the Ceramic Society of Japan  >  Vol.122  No.1426 (June) (2014)  >  pp.477-482

Journal of the Ceramic Society of Japan
<<Previous article Vol.122  No.1426 (June) (2014)   pp.477 - 482 Next article>>

Dielectric property of (001) one-axis oriented CaBi4Ti4O15-based thin films and their temperature dependence

Yohta KONDOH1), Shota OGAWA1) 2), Junichi KIMURA2), Takanori KIGUCHI3), Toyohiko J. KONNO3), Hiroshi FUNAKUBO2), Hiroshi UCHIDA1)
1) Department of Materials and Life Sciences, Sophia University 2) Department of Innovative and Engineered Materials, Tokyo Institute of Technology 3) Institute for Material Research, Tohoku University

We proposed a thin-film capacitor with a stable temperature coefficient of capacitance (TCC) based on bismuth layer-structured dielectrics, CaBi4Ti4O15. Two types of doping were conducted to lower the dielectric loss in a higher temperature range above 300°C, i.e., Mn ion to compensate for lattice defects in crystalline grains and Bi12SiO20 to form a grain boundary phase were attempted in order to improve the insulating property of the oriented CaBi4Ti4O15 films. (00l) one-axis oriented Mn-doped or Bi12SiO20-doped CaBi4Ti4O15 films (with Mn or Bi12SiO20 content up to 3.0 or 1.75%) were fabricated successfully on (111)Pt/TiO2/(100)Si substrates buffered by (001)Ca2Nb3O10 nanosheets. These films exhibited a relatively lower loss factor in the temperature range from R.T. up to 400°C. In particular, the behavior of TCC on the Bi12SiO20-doped CaBi4Ti4O15 film was significantly stable, with a change in capacitance, ΔC/CR.T., within ±10% even at 400°C.


Keyword:
Dielectrics, Thin film, Calcium bismuth titanate, Chemical solution deposition (CSD), Doping, Temperature coefficient of capacitance (TCC)

Received: December 15, 2013
Accepted: March 31, 2014 , Published online: June 01, 2014
Copyright © 2014 The Ceramic Society of Japan

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