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Home  >  Journal list  >  MATERIALS TRANSACTIONS  >  Vol.43  No.11 (2002)  >  pp.2832-2837

MATERIALS TRANSACTIONS
<<Previous article Vol.43  No.11 (2002)   pp.2832 - 2837 Next article>>

Unusual Photoluminescence Decay of Porous Silicon Prepared by Rapid Thermal Oxidation and Quenching in Liquid Nitrogen

Toshimasa Wadayama1), Tuyoshi Arigane1), Kensho Hayamizu1) and Aritada Hatta1)
1) Department of Materials Science, Graduate School of Engineering, Tohoku University

Rapid thermal oxidation and quenching in liquid nitrogen (RTOQN) has been examined on anodized porous silicon (PS). The as-anodized PS samples exhibit a photoluminescence peak at 750 nm that decays instantaneously upon discontinuance of 325-nm He–Cd laser irradiation. In contrast, PS samples after RTOQN show a luminescence peak at 560 nm that decays very slowly (>1 s). In this paper some detailed RTOQN conditions leading to such a slow-decay photoluminescence are defined.


Keyword:
porous silicon; photoluminescence; thermal oxidation; photoluminescence decay; infrared absorption spectroscopy; X-ray photoelectron spectroscopy; Raman spectroscopy

Received: July 03, 2002
Accepted: September 10, 2002 , Published online: September 06, 2005
Copyright (c) 2005 The Japan Institute of Metals

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