You are not logged in Total: 7journals, 19,556articles Online
AccountAccount
Login / Register
Forgot Login?
 
Main menuMain menu
What's new
Journal list
Visiting ranking
Phrase ranking
Polls
About us
 
SearchSearch
 
Journal Site
Advanced Search
 

Home  >  Journal list  >  MATERIALS TRANSACTIONS  >  Vol.43  No.8 (2002)  >  pp.2058-2062

MATERIALS TRANSACTIONS
<<Previous article Vol.43  No.8 (2002)   pp.2058 - 2062 Next article>>

Annealing Effect on the Optical Properties of a-SiC:H Films Deposited by PECVD

Yong-Tak Kim1), Sung-Min Cho1), Byoungyou Hong2), Su-Jeong Suh1), Gun-Eik Jang3) and Dae-Ho Yoon1)
1) Department of Advanced Materials Engineering, Sungkyunkwan University
2) School of Electrical & Computer Engineering, Sungkyunkwan University
3) Department of Materials Science & Materials Engineering, Chungbuk University


Effects of annealing temperature (Ta) on the structure of hydrogenated amorphous silicon carbide (a-SiC:H) films prepared by RF plasma chemical vapor deposition (CVD) method are investigated by using Fourier Transform-Infrared Spectrometry (FT-IR), X-ray Photoelectron Spectroscopy (XPS) and UV-VIS spectrophotometer techniques. It is found that an annealing process results in structural rearrangement and evacuation of hydrogen atoms from CHn and SiHn bonds. The emission of hydrogen bonded to silicon and carbon responsible for the decrease of optical band gap (Eopt) by 0.70 eV in the range of Ta from 573 to 873 K . This hydrogen loss is interpreted in terms of hydrogen molecule formation and outerdiffusion. In addition, the surface morphology of films was investigated by atomic force microscopy (AFM).


Keyword:
chemical vapor deposition, silicon carbide (SiC), band gap, annealing

Received: September 20, 2001
Accepted: June 03, 2002 , Published online: September 06, 2005
Copyright (c) 2005 The Japan Institute of Metals

PDFPDF file (J-STAGE)J-STAGEJ-STAGE


SPARC Japan

Terms of Use | Privacy Policy