|
Exchange Bias and Spin-Valve Giant Magnetoresistance in Multilayers with Mn-17 mol%Ir-2 mol%Pt Antiferromagnetic Layer
|
Dong-Min Jeon1), Yoon-Sik Kim1), Suk-Min Na1), Jae-Chul Ro2), Dae-Ho Yoon1) and Su-Jeong Suh1)
|
1) Department of Advanced Materials Engineering, Sungkyunkwan University
2) R-D center, Samsung electro-mechanics
|
We fabricated bottom spin valves (SV) films using Mn–17 mol%Ir–2 mol%Pt antiferromagnetic material. A bottom SV composing of Ta/Ni–20 mol%Fe seed layer shows an improved exchange field (Hex). The high Hex of about 17.4 kA/m was obtained in Si(100)/Ta 3 nm/NiFe 3 nm/Mn–17 mol%Ir–2 mol%Pt 7 nm/Co–10 mol%Fe 1 nm/NiFe 5 nm/Ta exchange biasing layer. The giant magnetoresistance (GMR) and the thermal stability of bottom SVs were evaluated by comparing with a top SV. Bottom SV showed the higher GMR ratio of about 5.2% than a top SV with same thick ferromagnetic layer. It seems that a large short circuit effect of conductance in a free layer of a bottom spin valve. In order to improve thermal stability of a bottom SV, we inserted the synthetic antiferromagnetically coupled pinned layers (Co–Fe/Ru/Co–Fe) between the Mn–17 mol%Ir–2 mol%Pt and Cu layers. Thus, the enhanced thermal stability of Hex can be obtained in bottom synthetic SVs.
|
Keyword: manganese-iridium-platinum, exchange bias, giant magnetoresistance, spin valve, synthetic antiferromagnetic coupling
|
Received: September 21, 2001
Accepted: March 20, 2002 ,
Published online: September 06, 2005 |
|
Copyright (c) 2005 The Japan Institute of Metals |
 Reference
,
 PDF file (J-STAGE)
,  J-STAGE
|
|
Account
Main menu
Search
