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Home  >  Journal list  >  MATERIALS TRANSACTIONS  >  Vol.42  No.9 (2001)  >  pp.1870-1873

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Secondary Electron Emission Characteristics of MgO Thin Films Prepared by an Advanced Ion-Plating Method

Kazuo Uetani1), Hiroshi Kajiyama2)3), Akira Kato2), Akiko Takagi4), Takanobu Hori1), Isao Tokomoto1), Yasuhiro Koizumi1), Koichi Nose1), Yasushi Ihara2), Ken-ichi Onisawa2) and Tetsuroh Minemura2)
1) R&D Center, ShinMaywa Industries, Ltd.
2) Hitachi Research Laboratory, Hitachi, Ltd.
3) Graduate School of Engineering, Ibaraki University
4) Graduate Student, Ibaraki University

We measured the secondary electron emission (SEE) and the film microstructures of the MgO thin films. The films were deposited by the advanced ion-plating (AIP) method we developed and also a conventional electron beam evaporation (EB) method for reference. The secondary electron yield, γ, defined as a ratio of irradiated ion current to emitted electron current of the samples was measured to be 0.55 for the AIP film and 0.35 for the EB film. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) observations revealed that the AIP film had well-defined columnar structures which were grown from the substrate interface to the film surface. The AIP film with thickness of a 100 nm had (111) preferred orientation, while the crystal orientation of the EB film was not detected. We supposed that the γ value was greatly improved due to the improved crystallinity as well as (111) preferred orientation.

plasma display panel, magnesium oxide, protective layer, advanced ion-plating, secondary electron emission

Received: April 26, 2001
Accepted: June 19, 2001 , Published online: September 06, 2005
Copyright (c) 2005 The Japan Institute of Metals



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