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Home  >  Journal list  >  Journal of the Society of Materials Science, Japan  >  Vol.56  No.7 (2007)  >  pp.667-674

Journal of the Society of Materials Science, Japan
<<Previous article Vol.56  No.7 (2007)   pp.667 - 674 Next article>>

Suggestion of Evaluation Method for Adhesion of DLC Films Using Scratch Test and 180 Degree Bend Test

Morimasa NAKAMURA1), Ken-ichi MIURA1), Takashi MATSUOKA2) and Tomoko HIRAYAMA3)
1) Tech., Inst., of Osaka Pref.
2) Dept. of Mech. and Systems Eng., Doshisha Univ.
3) Dept. of Energy and Mech. Eng., Doshisha Univ.

A new formula to calculate Adhesion energy W of DLC films was suggested on the base of Bull's model using Critical load Lc by scratch test in consideration of compressive residual stress σres in the film. Beside, a new Adhesion parameter J indicating Adhesion energy of the film was derived using fractured area ratio Rb by 180° bend test. Further, with DLC films practically deposited on SUS304 under the various deposition conditions by UBM sputtering, Lc by scratch test, σres by substrate curvature measuring test, Young's modulus EF by nano-indentation test, and Rb by 180° bend test were obtained. Validity of these formula and parameter for Adhesion energy were assessed by evaluating changes in Lc, σres, EF, Rb, W, and J with deposition conditions of the DLC films. Critical load Lc by scratch test changed significantly depending on the changes in mechanical property of EF, and Rb by 180° bend test changed with film thickness, were considered to be unreasonable as evaluating of film adhesion. While Adhesion energy W and Adhesion parameter J calculated by the formula suggested in this paper had a proportional relationship regardless of the deposition conditions. Both W and J were concluded to be derived appropriately for the evaluation of DLC film adhesion.

Diamondlike carbon, Unbalanced magnetron sputtering, Adhesion, Scratch test, 180 degree bend test

Received: September 20, 2006
Published online: July 20, 2007
Copyright (c) 2007 by The Society of Materials Science, Japan



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