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Home  >  Journal list  >  Journal of the Ceramic Society of Japan  >  Vol.116  No.1349 (January) (2008)  >  pp.126-129

Journal of the Ceramic Society of Japan
<<Previous article Vol.116  No.1349 (January) (2008)   pp.126 - 129 Next article>>

Study for the origin of fracture of advanced pore-free silicon carbide with damage tolerance

Shinya MATSUDA1), Masafumi MATSUSHITA1), Manabu TAKAHASHI1), Hiroaki OHFUJI2) and Nagatoshi OKABE3)
1) Graduate School of Science and Engineering, Ehime University
2) Geodynamics Research Center, Ehime University
3) Campus Innovation Center, Ehime University


  It had been well known that the fracture of SiC manufactured by conventional reaction sintering method was caused by one of the pores in that. However, according to the recent studies, pore free SiC so called APF-SiC was developed by improvement of reaction sintering method. As the result, the strength and the damage tolerance ability rise and then the cause of fracture of APF-SiC changed from pores to something else. Therefore we have investigated fracture surface of APF-SiC by using FE-SEM and EDS in order to demonstrate the cause of fracture. As the result, we found the inclusion that consisted of allotropes of Carbon covered with very thin SiO2 and SiN layer. And the size of the inclusion is ten times larger than that of SiC grain. Considering from present results, the inclusion is the one of the cause of fracture of APF-SiC.



Keyword:
Advanced pore-free silicon carbide, FE-SEM, EDS, Inclusion, Allotropes of carbon, Oxide and nitride of silicon

Received: August 09, 2007
Accepted: November 15, 2007 , Published online: January 01, 2008
Copyright (c) 2008 The Ceramic Society of Japan

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