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Home  >  Journal list  >  Journal of the Society of Materials Science, Japan  >  Vol.57  No.3 (2008)  >  pp.304-309

Journal of the Society of Materials Science, Japan
<<Previous article Vol.57  No.3 (2008)   pp.304 - 309 Next article>>

Evaluation of Microstructure for High-Strength Reaction-Sintered Silicon Carbide

Yoshiyasu ITOH1) and Shoko SUYAMA1)
1) Power and Industrial Systems R & D Center, Toshiba, Corporation

A newly developed high-strength reaction-sintered silicon carbide (SiC), which has two or three times higher strength than the normal sintered SiC, is one of the most promising candidates such as the lightweight substrate of optical mirror, because of fully dense, small sintering shrinkage (±1%), good shape capability and low sintering temperature. In this paper, in order to improve the performance of newly developed reaction-sintered SiC, the microstructure was investigated by paying attention to the crystal structures and the interface of each crystals using the observation of transmission electron microscope and X-ray diffraction analysis. As a result, it made clear that the finer-scale microstructure could be observed as consisting of large particles (∼1μm in diameter) of starting powder α–SiC and small particles (<1μm in diameter) of β–SiC formed during the reaction (Si+C→SiC) with the residual silicon filling the remaining porosity. Also, it was identified that the β–SiC formed during the reaction referred to the cubic (3C) polytype and the α–SiC of starting powder referred to the hexagonal (6H) polytype.

High-strength, Reaction-sintering, Silicon carbide, Residual silicon, Microstructure, Transmission electron microscope, Electron diffraction, Mercury intrusion method, X-ray diffraction

Received: June 01, 2007
Published online: March 19, 2008
Copyright (c) 2008 by The Society of Materials Science, Japan



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