You are not logged in Total: 7journals, 20,366articles Online
Login / Register
Forgot Login?
Main menuMain menu
What's new
Journal list
Visiting ranking
Phrase ranking
About us
Journal Site
Advanced Search

Home  >  Journal list  >  MATERIALS TRANSACTIONS  >  Vol.49  No.6 (2008)  >  pp.1380-1384

<<Previous article Vol.49  No.6 (2008)   pp.1380 - 1384 Next article>>

Effect of CH/C2 Species Density on Surface Morphology of Diamond Film Grown by Microwave Plasma Jet Chemical Vapor Deposition

Chun-Hsi Su1) and Ching-Yu Chang1)
1) Graduate Institute of Mechanical and Electrical Engineering, National Taipei University of Technology

The present research employs in-situ plasma Optical Emission Spectroscopy (OES) to explore the effect of microwave plasma jet chemical vapor deposition (MPJCVD) on activating CH4+H2 plasma environment and synthesizing diamond film. Surface morphology and main orientation of lattice plane of the diamond synthesized under different processing parameters are also examined. Since species such as CH, H2, hydrogen Balmer alpha (Hα), carbon dimer (C2) and hydrogen Balmer beta Hβ in the plasma radical are easily influenced by gas concentration, substrate temperature and processing parameters, in-situ OES is employed to diagnose in-situ OES diagnosing is employed to composition of plasma species in the synthesis of diamond film. Our findings reveal that species such as CH, C2 and Hβ in microwave plasma jet have significant influence on grain size, surface morphology and H/C carbon concentration. The Raman spectrum measurement can prove the relationship between CH/C2 species density and diamond surface morphology.

diamond, nanocrystalline diamond, mechanism, optical emission spectroscopy (OES), Raman spectrum

Received: December 12, 2007
Accepted: February 25, 2008 , Published online: May 25, 2008
Copyright (c) 2008 The Japan Institute of Metals



Terms of Use | Privacy Policy