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Home  >  Journal list  >  Journal of the Ceramic Society of Japan  >  Vol.116  No.1352 (April) (2008)  >  pp.566-571

Journal of the Ceramic Society of Japan
<<Previous article Vol.116  No.1352 (April) (2008)   pp.566 - 571 Next article>>

Effects of adding Y2O3 on the electrical resistivity of aluminum nitride ceramics

Hiroaki SAKAI1), Yuji KATSUDA1), Masaaki MASUDA1), Chikashi IHARA1) and Tetsuya KAMEYAMA2)3)
1) NGK Insulators, Ltd.
2) Environmental Technology and Urban Planning, Nagoya Institute of Technology
3) National Institute of Advanced Industrial Science and Technology (AIST)


  Electrical resistivity of AlN ceramics was examined with various amounts of Y2O3 within 0 to 4.8 mass%. The electrical resistivity at room temperature varied from 1016 to 1010 Ω·cm with different Y2O3 amounts and at sintering temperatures. In the typical samples sintered at 1900°C, a smaller amount of Y2O3 addition with 0.1 to 0.5 mass% gives the lowest electrical resistivity of 1010 Ω·cm, whereas the higher amount of Y2O3 maintains high resistivity of more than 1013 Ω·cm. The results derived from different analytical techniques such as impedance analysis, cathodoluminescence spectrum and microstructural analysis explain the importance of the oxygen concentration in the AlN grain for the electrical resistivity of AlN ceramics.


Keyword:
Aluminum nitride, Yttria, Electrical resistivity, Impedance analysis, Cathodoluminescence, Microstructure

Received: November 08, 2007
Accepted: February 21, 2008 , Published online: April 01, 2008
Copyright (c) 2008 The Ceramic Society of Japan

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