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Home  >  Journal list  >  Journal of the Ceramic Society of Japan  >  Vol.117  No.1365 (May) (2009)  >  pp.578-581

Journal of the Ceramic Society of Japan
<<Previous article Vol.117  No.1365 (May) (2009)   pp.578 - 581 Next article>>

Chemical vapor infiltration (CVI) SiC whisker on carbon woven fabric for filter applications

Ik Whan KIM1), Sung Hyuk CHO1), Jun Gyu KIM1) and Doo-Jin CHOI1)
1) Department of Ceramic Engineering, Yonsei University

  β-silicon carbide whiskers have been synthesized on a carbon fabric by a vapor-solid (VS) mechanism using the Chemical Vapor Infiltration (CVI) process. Optimum processing conditions for SiC whisker growth were determined by mapping of SiC deposition behavior. SiC was deposited on a carbon fabric substrate as a film or whiskers, depending on processing conditions. The mean diameter and line density of the whiskers was the highest at an input gas ratio of 50. As temperature increases, the mean diameter of the whiskers increased and the line density of whiskers decreased. In the optimum processing conditions, whiskers grew uniformly with high growth density and formed a networking structure between each of the carbon filaments resulting in a structure suitable for filter applications.

Silicon carbide, Whisker, Vapor-solid mechanism, Carbon fabric, Mapping, Networking structure, Filter

Received: October 20, 2008
Accepted: April 16, 2009 , Published online: May 01, 2009
Copyright (c) 2009 The Ceramic Society of Japan



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