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Home  >  Journal list  >  MATERIALS TRANSACTIONS  >  Vol.42  No.9 (2001)  >  pp.2024-2025

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Recovery Stage of Polycrystalline-Si Prepared by Excimer Laser Annealing

Naoto Matsuo1), Hisashi Abe2), Naoya Kawamoto1), Yoshio Miyai2) and Hiroki Hamada2)
1) Department of Electrical & Electronic Engineering, Yamaguchi University
2) Microelectronics Research Center, SANYO Electric Co., Ltd

By irradiating the multi-pulse excimer laser with the energy density smaller than 200 mJ/cm2 on the amorphous silicon (a-Si), the crystallinity of the Si increases, as increasing the number of the pulse. During the first laser irradiation some part of the melted a-Si becomes the polycrystalline (poly)-Si which corresponds to the nucleus, and after the second irradiation the poly-Si does not melt and the remaining a-Si becomes the poly-Si. The crystal growth of the poly-Si proceeds by the solid phase crystallization (SPC). Crystal growth of poly-Si by excimer laser annealing (ELA) is discussed by considering the recovery stage. This stage is examined from the relationship between the amorphous Si area and the total irradiation time. The fact that the measured data coincides with the theoretical data indicates that the recovery proceeds during the ELA at the low energy density.

poly-silicon, excimer laser annealing, recovery, nucleus

Received: May 31, 2001
Accepted: August 07, 2001 , Published online: September 06, 2005
Copyright (c) 2005 The Japan Institute of Metals



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