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Home  >  Journal list  >  MATERIALS TRANSACTIONS  >  Vol.50  No.8 (2009)  >  pp.1992-1997

MATERIALS TRANSACTIONS
<<Previous article Vol.50  No.8 (2009)   pp.1992 - 1997 Next article>>

Two-Step Etching Mechanism of Ag-Si Nanostructure with Various Ag Nanoshape Depositions

Zhan-Shuo Hu1), Fei-Yi Hung2), Shoou-Jinn Chang1)3), Kuan-Jen Chen4), Wen-Long Wang2), Sheng-Joue Young4) and Tse-Pu Chen4)
1) Institute of Electro-Optical Science and Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University
2) Institute of Nanotechnology and Microsystems Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University
3) Institute of Microelectronics & Department of Electrical Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University
4) Institute of Microelectronics, National Cheng Kung University


Nanopatterns can be structured using either dry-etching or wet-etching. In this study, Ag/Si thin film was used to prepare the nano-hollow structures using the two step selective etching method (dry-wet etching, DWE). The etching scale was controlled by the layball process and a Focus Ion Beam (FIB) was used to investigate the DWE mechanism. Increasing the beam current of dry-etching raised the height of nano prominent structures, but deteriorated the interface of Ag/Si film, and even damaged the Ag film because of Ga+ bombardment. Regardless of the Ag nanoshape deposition, the residual Ag films were doped with Ga+ and were sensitive to DWE. After wet-etching, a nano hollow formed and the Ag films sunk. However, AgGa (Ag film doped Ga ions) sidewall films formed due to the concentration gradient and the oxidative potential and this increased the volume of microporous phases, resulting in a reduction in the depth. Also, 15–30 nm Ag nano-particles were able to enhance the DWE mechanism in the Ag/Si nanostructures.


Keyword:
silver, silicon, etching, nanostructure

Received: February 06, 2009
Accepted: June 03, 2009 , Published online: July 25, 2009
Copyright (c) 2009 The Japan Institute of Metals

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