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Home  >  Journal list  >  Journal of the Ceramic Society of Japan  >  Vol.117  No.1369 (September) (2009)  >  pp.1004-1008

Journal of the Ceramic Society of Japan
<<Previous article Vol.117  No.1369 (September) (2009)   pp.1004 - 1008 Next article>>

Doping effect of Dy on leakage current and oxygen sensing property of SrTiO3 thin film prepared by PLD

Naoki WAKIYA1), Yusuke KIMURA1), Naonori SAKAMOTO1), Desheng FU2), Toru HARA3), Takashi ISHIGURO3), Takanori KIGUCHI4), Kazuo SHINOZAKI5) and Hisao SUZUKI2)
1) Department of Materials Science and Chemical Engineering, Shizuoka University
2) Graduate School of Materials Science and Technology, Shizuoka University
3) Development Planning Division, Taiyo Yuden Co., Ltd.
4) Institute for Materials Research, Tohoku University
5) Department of Metallurgy and Ceramics Science

  Polycrystalline Dy-doped SrTiO3 thin films deposited by pulsed laser deposition (PLD) on CeO2-buffered yttria-stabilized zirconia (YSZ) single crystal substrates showed oxygen sensing characteristics at room temperature. The oxygen gas sensing characteristics depended on the amount of Dy-doping, and 1.5 mol% Dy-doping was most effective. The oxygen gas sensing characteristics were closely related to leakage current characteristics of Dy-doped SrTiO3 thin film deposited on ZnIn2O4/YSZ/Si(001) substrates. The suppression of leakage current by Dy-doping suggests that Ti4+ is substituted by Dy3+, and the Dy3+ acts as an acceptor. Further doping of Dy3+ brought about the increase of the leakage current, and it lowered the oxygen gas sensitivity.

Oxygen sensor, SrTiO3 thin film, Dy-doping, Leakage current

Received: May 25, 2009
Accepted: July 16, 2009 , Published online: September 01, 2009
Copyright (c) 2009 The Ceramic Society of Japan



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