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Home  >  Journal list  >  Journal of the Ceramic Society of Japan  >  Vol.118  No.1381 (September) (2010)  >  pp.788-791

Journal of the Ceramic Society of Japan
<<Previous article Vol.118  No.1381 (September) (2010)   pp.788 - 791 Next article>>

Preparation of polycrystalline VO2 films on glass and TiO2/glass substrates by means of excimer laser assisted metal organic deposition

Masami NISHIKAWA1), Tomohiko NAKAJIMA2), Takaaki MANABE2), Takeshi OKUTANI1) and Tetsuo TSUCHIYA2)
1) Yokohama National University
2) National Institute of Advanced Industrial Science and Technology

  An excimer laser assisted metal organic deposition process for the preparation of vanadium dioxide (VO2) films is described. When a precursor film grown on a silica glass substrate by preheating at 300°C was irradiated with a KrF laser at room temperature in air, the film was crystallized into polycrystalline VO2 phases. Generally, the preparation of VO2 films requires strict atmosphere control, but in this process, the polycrystalline VO2 films were successfully prepared without it. Moreover, it was revealed that crystallization into the VO2 phases was promoted by a TiO2 buffer layer placed on the glass substrate. This means that the photochemical reaction induced by the TiO2 absorbing the laser participates in the crystallization. The electrical resistivity of the film grown on the TiO2/glass substrate was lowered compared to that of the film grown on the glass substrate due to improvement of the film uniformity. The crystallinity of the obtained film was dependent on the irradiation time. With the improved crystallinity of the film, the resistivity drop through the metal-insulator transition became large.

VO2, Film, Laser, KrF, MOD

Received: March 23, 2010
Accepted: May 20, 2010 , Published online: September 01, 2010
Copyright (c) 2010 The Ceramic Society of Japan



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