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Home  >  Journal list  >  MATERIALS TRANSACTIONS  >  Vol.45  No.7 (2004)  >  pp.2128-2136

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Improvement of Oxidation Resistance and Oxidation-Induced Embrittlement by Controlling Grain Boundary Microstructure in Silicon Carbides with Different Dopants

Sadahiro Tsurekawa1), Hiroaki Watanabe1), Nobuyuki Tamari2) and Tadao Watanabe1)
1) Laboratory of Materials Design and Interface Engineering, Department of Nanomechanics, Graduate School of Engineering, Tohoku University
2) Kansai Center, National Institute of Advanced Industrial Science and Technology

High temperature oxidation and oxidation-induced embrittlement in β-silicon carbides (SiCs) with different grain boundary microstructures have been studied. SiCs with different grain boundary microstructures were fabricated by hot-pressing with different doping elements like Mg, Al, P. Oxidation experiments were carried out under the oxygen partial pressure ranging from 0.303 Pa to 78.5 Pa at temperatures 1623—1773 K for 7.2—36 ks. Thereafter, the degree of oxidation-induced embrittlement was quantitatively evaluated by three-point bend tests at room temperature in connection with grain boundary microstructure. More severe degradation was observed as a result of oxidation though the passive oxidation took place. It is concluded that the oxidation-induced embrittlement in β-SiC can be improved by decreasing the frequency of random boundaries and the grain size. The potential of grain boundary engineering for a ceramic material has been confirmed.

silicon carbide, grain boundary, grain boundary character distribution, grain boundary engineering, high-temperature oxidation, oxidation embrittlement, intergranular fracture

Received: February 16, 2004
Accepted: March 15, 2004 , Published online: June 24, 2005
Copyright (c) 2005 The Japan Institute of Metals



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