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Home  >  Journal list  >  MATERIALS TRANSACTIONS  >  Vol.53  No.3 (2012)  >  pp.571-574

<<Previous article Vol.53  No.3 (2012)   pp.571 - 574 Next article>>

Characteristics of Thin-Film-Transistors Based on Zn–In–Sn–O Thin Films Prepared by Co-Sputtering System

K. J. Chen1)2), F. Y. Hung2), T. S. Lui2), S. J. Chang3) and T. Y. Liao3)
1) The Instrument Center, National Cheng Kung University
2) Department of Materials Science and Engineering, Institute of Nanotechnology and Microsystems Engineering, Center for Micro/Nano Science and Engineering, National Cheng Kung University
3) Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University

This study presents the growth of ZITO film by co-sputtering system. By adjusting the chemical composition and electrical properties of ZITO, an amorphous ZITO (a-ZITO) matrix with a semiconducting character was used to apply in active layer for thin-film transistors (TFTs) device. The proposed a-ZITO channel layer with SiNx dielectric layer exhibited depletion mode operation. The device exhibited a subthreshold swing (SS) of 1.65 V/dec, a field-effect mobility (μFE) of 2.57 cm2 V−1 s−1, and an on/off current ratio (Ion/Ioff) of 104. The small SS and an acceptable μFE were associated with a smaller roughness and stable composition of ZITO channel layer.

zinc–indium–tin–oxygen (ZITO), co-sputtering, thin-film transistors (TFTs), depletion mode

Received: November 10, 2011
Accepted: December 19, 2011 , Published online: February 25, 2012
Copyright (c) 2012 The Japan Institute of Metals



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