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Home  >  Journal list  >  MATERIALS TRANSACTIONS  >  Vol.53  No.7 (2012)  >  pp.1226-1233

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Electronic Transports for Thermoelectric Applications on IV–VI Semiconductors

Akihiro Ishida1), Yutaro Sugiyama1), Hirokazu Tatsuoka1), Tomoki Ariga2), Mikio Koyano2), Sadao Takaoka3)
1) Faculty of Engineering, Shizuoka University 2) School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST) 3) Department of Physics, Graduate School of Science, Osaka University

Seebeck effect, Peltier effect, Thomson effect, electronic thermal conductivity, Hall effect, and Nernst effect are described on the basis of electronic conduction theory, taking account of effective mass anisotropy, nonparabolicity in Ek relation, and temperature dependent band gap. It is shown that the temperature dependence of the band gap does not modify the basic equations for the Seebeck coefficient, thermal conductivity, and Nernst coefficient. In narrow gap semiconductors, existence of minority carriers significantly enhances the electronic thermal conductivity, owing to the multiple carrier transport known as bipolar diffusion. Calibration coefficient γ for the Hall effect (RH = - γ /en) is increased by nonparabolicity in the Ek relation. Nernst coefficient gives useful information on scattering properties of the materials.

thermoelectric transport, Seebeck effect, Nernst effect, Boltzmann equation, IV–VI material

Received: November 29, 2011
Accepted: March 02, 2012 , Published online: June 25, 2012
Copyright © 2012 The Thermoelectrics Society of Japan



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