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Home  >  Journal list  >  Journal of the Ceramic Society of Japan  >  Vol.121  No.1416 (August) (2013)  >  pp.670-674

Journal of the Ceramic Society of Japan
<<Previous article Vol.121  No.1416 (August) (2013)   pp.670 - 674 Next article>>

Impedance response of lead zirconate titanate thick film structures on silicon substrates for a high frequency ultrasonic transducer

Takashi IIJIMA1), Naoto KOCHI2), Soichiro OKAMURA2)
1) National Institute of Advanced Industrial Science and Technology, AIST Tsukuba West 2) Department of Applied Physics, Tokyo University of Science

Micromachined ultrasonic transducers (MUTs) are attractive devices for medical imaging systems. In order to observe biological tissue images clearly, ultrasonic waves above 100 MHz in a thickness oscillation mode are required. Therefore, the film thickness of the piezoelectric materials like lead zirconate titanate (PZT) is required less than 10 µm. In this study, to adapt the demand of high frequency ultrasonic, thickness mode transducers using the PZT thick film were prepared with a CSD process, a FEM simulation, and a micro fabrication process. The effects of the side length of PZT thick film structure and the Si substrate thickness on the electrical impedance properties were investigated, because the mechanical oscillation was equivalent to the electrical impedance oscillation. To reduce a series of resonance frequency like a composite resonator, a back side of the Si substrate was removed with deep Si etching process. The PZT thick film with Si substrate cavity structure showed sharp fundamental thickness mode resonance peak at around 168 MHz. Therefore, the fabricated device structure is applicable to the high frequency ultrasonic medical imaging system in the future.


Keyword:
Chemical solution deposition, PZT, Thick film, Ultrasonic transducer, MUTs, Electrical impedance

Received: April 15, 2013
Accepted: June 26, 2013 , Published online: August 01, 2013
Copyright © 2013 The Ceramic Society of Japan

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