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Home  >  Journal list  >  Journal of the Ceramic Society of Japan  >  Vol.122  No.1427 (July) (2014)  >  pp.543-546

Journal of the Ceramic Society of Japan
<<Previous article Vol.122  No.1427 (July) (2014)   pp.543 - 546 Next article>>

Selective growth of gold nanostructures on locally amorphized silicon

Hiroki ITASAKA1), Masayuki NISHI1), Yasuhiko SHIMOTSUMA1), Kiyotaka MIURA1), Masashi WATANABE2), Himanshu JAIN2), Kazuyuki HIRAO1)
1) Department of Material Chemistry, Graduate School of Engineering, Kyoto University 2) Department of Materials Science and Engineering, Lehigh University

Locally selective formation of gold nanostructures on a silicon wafer without photolithography, electrolysis, or hydrofluoric acid was reported previously. With our previous method, gold nanostructures grow selectively on the locally amorphized surface on a silicon wafer when the silicon wafer is exposed to a customized Au ion-containing solution. The locally amorphized surface is produced by, for example, irradiation of a focused ion beam (FIB) or a femtosecond laser. The Au ion-containing solution is prepared by mixing (3-mercaptopropyl)trimethoxysilane (MPTMS) with an aqueous solution of HAuCl4. Here, the mechanism of selective growth of gold nanostructures on the amorphized silicon is explained. Au ions in the solution placed on the FIB- or laser-processed silicon are reduced by the amorphized silicon. Silicon-dangling bond defects, which exist in the amorphized silicon, seem to reduce the Au ions. Finally, we find that the use of MPTMS is unnecessary and a simple HAuCl4 aqueous solution produces desired results.

Gold nanostructures, Silicon, Amorphous silicon, Selective growth, Danglingbond defects

Received: October 01, 2013
Accepted: April 21, 2014 , Published online: July 01, 2014
Copyright © 2014 The Ceramic Society of Japan



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