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Home  >  Journal list  >  Journal of the Ceramic Society of Japan  >  Vol.122  No.1430 (October) (2014)  >  pp.908-913

Journal of the Ceramic Society of Japan
<<Previous article Vol.122  No.1430 (October) (2014)   pp.908 - 913 Next article>>

Electrical and optical properties of W-doped ZnO films grownon (11\bar{2}0) sapphire substrates using pulsed laser deposition

Yutaka ADACHI1), Noriko SAITO2), Minako HASHIGUCHI1), Isao SAKAGUCHI2), Taku SUZUKI2), Naoki OHASHI1), Shunichi HISHITA2)
1) Optoelectronic Materials Group, Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS) 2) Ceramics Chemistry Group, Optical and Electronic Materials Unit, NIMS

WxZn1−xO films with various doping concentration were prepared using pulsed laser deposition (PLD) on the (1120) face of sapphire. The c-axis-oriented WxZn1−xO films were grown without in-plane rotation domains when the W content in the films was below 3.6 at.%. The films exhibit a high transmittance of approximately 80% in the visible-near infrared region regardless of the W content, and no shift of the absorption edge was observed. From the results of Hall measurements, it was revealed that the doping efficiency of W in the films was <0.15 electrons/W. The electron mobility of the WxZn1−xO films was 14–35 cm2 V−1 s−1, which is relatively low compared with that of the undoped ZnO film grown using PLD. The low doping efficiency and electron mobility are considered to be attributed to the formation of defects resulting from the W-doping.


Keyword:
Zinc oxide, Tungsten doping, Sapphire substrate, Pulsed laser deposition, Hall measurement, Defect compensation

Received: May 30, 2014
Accepted: August 02, 2014 , Published online: October 01, 2014

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