You are not logged in Total: 7journals, 20,388articles Online
Login / Register
Forgot Login?
Main menuMain menu
What's new
Journal list
Visiting ranking
Phrase ranking
About us
Journal Site
Advanced Search

Home  >  Journal list  >  MATERIALS TRANSACTIONS  >  Vol.42  No.12 (2001)  >  pp.2646-2648

<<Previous article Vol.42  No.12 (2001)   pp.2646 - 2648 Next article>>

Grain Morphology of Recrystallized Polycrystalline-Si Film by Excimer Laser Annealing

Naoto Matsuo1), Tomoyuki Nouda2), Naoya Kawamoto1), Ryouhei Taguchi1), Yoshio Miyai2) and Hiroki Hamada2)
1) Department of Electrical & Electronic Engineering, Yamaguchi University
2) Microelectronics Research Center, SANYO Electric Co., Ltd.

Grain morphology of recrystallized polycrystalline(poly)-Si by excimer laser annealing (ELA) was investigated for both SiO2 (50 nm)/SiN (50 nm)/glass substrate and quartz substrate. The Raman peak of the poly-Si on the SiN substrate was shifted to the higher frequency side than that on the quartz substrate. The disk-shaped grains were observed on the quartz substrate, while they were not observed on the SiN substrate. The poly-Si grains with a uniform grain size were observed, and kept constant in a range of the present energy density and the shot number on the SiN substrate. To understand these phenomena, the crystal growth model relating to the concentration of hydrogen atoms in the film is discussed.

poly-silicon, excimer laser annealing, disk-shaped grains, hydrogen atoms, SiN substrate

Received: September 03, 2001
Accepted: October 22, 2001 , Published online: September 06, 2005
Copyright (c) 2005 The Japan Institute of Metals



Terms of Use | Privacy Policy