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Home  >  Journal list  >  MATERIALS TRANSACTIONS  >  Vol.42  No.4 (2001)  >  pp.691-696

MATERIALS TRANSACTIONS
<<Previous article Vol.42  No.4 (2001)   pp.691 - 696 Next article>>

Reactive Diffusion between Ultra High Purity Iron and Silicon Wafer

Toshitada Shimozaki1), Akira Hirai2), Takahisa Okino3) and Chan-Gyu Lee4)
1) The Center for Instrumental Analysis, Kyushu Institute of Technology
2) Department of Materials Science and Engineering, Faculty of Engineering, Kyushu Institute of Technology
3) College of Liberal Arts and Sciences, Nippon Bunri University
4) Department of Materials Science and Engineering, Changwon National University


Reactive diffusion between iron and silicon wafer has been studied by using 99.995% electrolytic iron flakes (4.5N–Fe), a 99.5% iron sheet (3N–Fe) and two kinds of iron plates having different oxygen contents which were made by melting the same 99.9% electrolytic iron flakes under different conditions. The growth rate of the Fe3Si diffusion layers formed in the 4.5N–Fe/Si diffusion couples is faster than that in other couples. The authors have previously reported briefly that Fe3Si formed in bulk Fe/Si diffusion couples consisted of interstitial free iron (IF-steel) and Si wafer grows considerably faster than that in bulk 99.99%Fe (4N–Fe)/Si diffusion couples and proposed a possible explanation that oxygen atoms which initially distribute randomly in the 4N–Fe specimens are enriched in the iron near the Fe/Fe3Si interface and they react with Si atoms and form SiO2 film on the surface of voids formed in the iron near Fe/Fe3Si interface. The SiO2 film acts as a diffusion barrier and slows down the growth rate of iron silicides. Ti and Al atoms in IF-steel remove the effect of oxygen by scavenging oxygen atoms around them. So, Fe3Si in the IF-steel/Si couple can grow faster than that in the 4N–Fe/Si couples. This explanation suggests that the growth rate of Fe3Si is very fast in a Fe/Si diffusion couple, oxygen concentration in the iron is extremely small. The present experimental result that the growth rate of Fe3Si is faster than the IF-steel/Si diffusion couples supports this explanation because the oxygen concentration in 4.5N–Fe is very small.


Keyword:
high purity iron, iron silicide, Fe3Si, FeSi2, effect of impurity, interstitial free steel, reaction diffusion

Received: September 29, 2000
Accepted: February 16, 2001 , Published online: September 06, 2005
Copyright (c) 2005 The Japan Institute of Metals

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