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Home  >  Journal list  >  Journal of the Society of Materials Science, Japan  >  Vol.55  No.3 (2006)  >  pp.285-289

Journal of the Society of Materials Science, Japan
<<Previous article Vol.55  No.3 (2006)   pp.285 - 289 Next article>>

Influence of Arsenic Atoms on the Rate of Solid Phase Epitaxy : Molecular Dynamics Study

Satoshi IZUMI1), Katsunari MURAI1), Shotaro HARA1), Tomohisa KUMAGAI1) and Shinsuke SAKAI1)
1) Dept. of Mech. Eng., Tokyo Univ.


Solid phase epitaxy (SPE) of Si is one of the most fundamental processes in semiconductor fabrication techniques. Many experimental studies have been carried out for understanding the growth mechanism. However microscopic mechanism is not well understood. In this study, we investigated the effect of arsenic atoms on the rate of Si SPE by using molecular dynamics simulation. In the case of non-doped Si, an activation energy of SPE is found to be 2.1±0.5eV, which shows good agreement with the experimental result (2.7eV). It is also found that the energy barrier of crystallization in a/c interface amounts to be about 0.6eV, which corresponds to defect migration process. It indicates other processes such as defect formation also control the SPE process. The SPE rate increases by 2 times for 3 at% As doping and 100 times for 5 at% As doping and an activation energy remains to be constant. The increase in SPE rate would be enhanced by defect formation process in amorphous silicon, which reflects the increase in self-diffusion of silicon atoms caused by active As atoms.


Keyword:
Molecular dynamics, Solid phase epitaxy, Semiconductor, Silicon, Arsenic

Received: June 16, 2005
Published online: April 26, 2006
Copyright (c) 2006 by The Society of Materials Science, Japan

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