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Home  >  Journal list  >  MATERIALS TRANSACTIONS  >  Vol.43  No.4 (2002)  >  pp.650-653

MATERIALS TRANSACTIONS
<<Previous article Vol.43  No.4 (2002)   pp.650 - 653 Next article>>

Electron-Irradiation-Induced Amorphization in Mo/Si Nano-Multilayer Material

Etsuko Shioya1), Takanori Suda1), Seiichi Watanabe1), Somei Ohnuki1), Masahiko Ishino2), Osamu Yoda2), Hiroaki Abe3) and Fritz Phillip4)
1) Materials Science Division, Graduate School of Engineering, Hokkaido University
2) Kansai Research Establishment, Japan Atomic Energy Research Institute
3) Takasaki Research Establishment, Japan Atomic Energy Research Institute
4) Max-Planck-Institut fur Metallforschung


In the Mo–Si system, there are three typical intermetallic compounds. In order to get insight into the phase stability under irradiation, interface structure and non-equilibrium phase formation in multilayer materials with several nanometers scale were investigated by means of high-voltage electron microscope. The initial structure was composed of crystalline Mo and amorphous Si layers, and transition layer existed at the interfaces. The thickness of transition layers is thicker at the Mo-on-Si than at the Si-on-Mo interface. While those structures were basically stable after thermal annealing up to 773 K, two types of amorphous layers developed during electron irradiation at room temperature: one is an amorphous-Si layer and the other is a Mo–Si mixing layer. And the radiation-induced amorphization was accompanied by anomalous shrinkage in the thickness of layers. It is suggested that those phenomena are related to non-equilibrium phase formation and biased diffusion process during irradiation.


Keyword:
multilayer, interface, electron-irradiation, amorphization, high-resolution electron microscope

Received: November 12, 2001
Accepted: March 12, 2002 , Published online: September 06, 2005
Copyright (c) 2005 The Japan Institute of Metals

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