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Home  >  Journal list  >  MATERIALS TRANSACTIONS  >  Vol.43  No.4 (2002)  >  pp.674-680

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Formation of Anomalous Defect Structure on GaSb Surface by Low Temperature Sn Ion-Implantation

Noriko Nitta1), Masafumi Taniwaki1), Tomoo Suzuki1), Yoshihiko Hayashi2), Yuhki Satoh2) and Toshimasa Yoshiie2)
1) Department of Environmental Systems Engineering, Faculty of Engineering, Kochi University of Technology
2) Research Reactor Institute, Kyoto University

Defect formation in (100) GaSb by 60 keV Sn+ ion-implantation at 150–153 K is investigated using cross-sectional TEM, SEM and EDX. An anomalous structure consisting of many cells, which looks like a honey comb, was formed on the surface implanted with 8.9×1018 ions/m2. The diameter and the depth of a cell were about 50 nm and 220–250 nm respectively. The thickness of the walls partitioning the cells was about 10 nm. The upper part of the partitioning wall is amorphous and rich in Ga, while the lower part shows crystalline structure. A heavily strained region of 50 nm thickness, corresponding to the maximum depth of the projected Sn ions, was observed under the cells. This defect structure is compared with similar defects which have been observed in ion-implanted GaSb. The defect formation mechanism is discussed, and an explanation based on movement of the implantation induced point defects is proposed. It is assumed that hills and hollows are formed in the early stage of implantation. The point defects created on the hills do not contribute to the development of the defect structure, because they annihilate almost completely by the recombination of vacancy and interstitial and by the movement to the near surface sink. However, under the hollows, vacancies which escaped recombination remain, and the interstitial atoms, which are highly mobile at low temperatures, migrate far from there to aggregate under the hills. The hollows become deeper by the movement of the remaining vacancies to the surface, and the hills develop into the walls by the migration of the interstitial atoms from the surrounding hollows.

gallium antimonide, tin ion-implantation, III-V compound semiconductor, point defects, vacancy, interstitial, honey-comb, low temperature implantation, cross-sectional transmission electron microscopy, Fourier transformation, amorphous, micro-twin, high resolution transmission electron microscopy, energy dispersive X-ray spectroscopy, scanning electron microscopy, anomalous behavior, swelling, elevation, cavity, void, surface defect, strain, local composition, defect structure, defect formation mechanism

Received: November 26, 2001
Accepted: February 15, 2002 , Published online: September 06, 2005
Copyright (c) 2005 The Japan Institute of Metals



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