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Home  >  Journal list  >  Journal of the Ceramic Society of Japan  >  Vol.117  No.1365 (May) (2009)  >  pp.558-560

Journal of the Ceramic Society of Japan
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Characterization of SiC:H films deposited using HMDS precursor with C2H2 dilution gas by remote PECVD system

Sung Hyuk CHO1) and Doo Jin CHOI1)
1) Department of Ceramic Engineering, Yonsei University

  Amorphous SiC:H films were deposited on (100) silicon wafer by remote-Plasma Enhanced Chemical Vapor Deposition system in the temperature range of 400°C-450°C. Hexamethyldisilane (HMDS) and C2H2 gas were used as a precursor and a dilution gas, respectively. The lower deposition temperature and lower sp3/sp2 carbon bonding ratio made lower dielectric constant.

SiC:H, RPE-CVD, HMDS, Plasma, Low-k

Received: October 20, 2008
Accepted: April 16, 2009 , Published online: May 01, 2009
Copyright (c) 2009 The Ceramic Society of Japan



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