You are not logged in Total: 7journals, 20,366articles Online
Login / Register
Forgot Login?
Main menuMain menu
What's new
Journal list
Visiting ranking
Phrase ranking
About us
Journal Site
Advanced Search

Home  >  Journal list  >  MATERIALS TRANSACTIONS  >  Vol.55  No.5 (2014)  >  pp.758-762

<<Previous article Vol.55  No.5 (2014)   pp.758 - 762 Next article>>

Electrical Properties and Carrier Transport Mechanism of Au/n-GaN Schottky Contact Modified Using a Copper Pthalocyanine (CuPc) Interlayer

V. Janardhanam1), I. Jyothi1), Ji-Hyun Lee1), Jae-Yeon Kim1), V. Rajagopal Reddy2), Chel-Jong Choi1)
1) School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University 2) Department of Physics, Sri Venkateswara University

We investigated the electrical characteristics of Au/n-GaN Schottky rectifier incorporating a copper pthalocyanine (CuPc) interlayer using current–voltage (IV), capacitance–voltage (CV) and conductance–voltage (GV) measurements. The barrier height of the Au/CuPc/n-GaN Schottky contact was higher than that of the Au/n-GaN Schottky diode, indicating that the CuPc interlayer influenced the space charge region of the n-GaN layer. The series resistance of Au/CuPc/n-GaN Schottky contact extracted from the CV and GV methods was dependent on the frequency. In addition, the series resistance obtained from CV and GV characteristics was comparable to that from Cheung’s method at sufficiently high frequencies and in strong accumulation regions. The forward log I–log V plot of Au/CuPc/n-GaN Schottky contact exhibited four distinct regions having different slopes, indicating different conduction mechanisms in each region. In particular, at higher forward bias, the trap-filled space-charge-limited current was the dominant conduction mechanism of Au/CuPc/n-GaN Schottky contact, implying that the most of traps were occupied by injected carriers at high injection level.

GaN, Schottky contact, CuPc, series resistance, space-charge-limited current

Received: December 16, 2013
Accepted: February 28, 2014 , Published online: April 25, 2014
Copyright © 2014 The Japan Institute of Metals and Materials



Terms of Use | Privacy Policy