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Home  >  Journal list  >  Journal of the Ceramic Society of Japan  >  Vol.117  No.1365 (May) (2009)  >  pp.604-607

Journal of the Ceramic Society of Japan
<<Previous article Vol.117  No.1365 (May) (2009)   pp.604 - 607 Next article>>

Ferroelectric properties of direct-patternable La substituted Bi4Ti3O12 thin films formed by photochemical metal-organic deposition

Hyeong-Ho PARK1), Hong-Sub LEE1), Hyung-Ho PARK1), Ross H. HILL2) and Yun Taek HWANG3)
1) Department of Materials Science & Engineering, Yonsei University
2) 4D Labs and Department of Chemistry, Simon Fraser University
3) Research & Development Division, Hynix Semiconductor Inc.


  The surface microstructure and ferroelectric properties of direct-patternable Bi4-xLaxTi3O12 (BLT) films prepared by photochemical metal-organic deposition as a function of La contents were characterized. The surface microstructure showed that La substitution (x = 0.75 and 1.00) to Bi4Ti3O12 films was effective to induce an improved microstructure of the BLT films without the formation of surface holes. The measured remnant polarization values of BLT films with x = 0, 0.25, 0.50, 0.75, and 1.00 were 3.7, 7.1, 11.3, 16.0, and 8.1 μC/cm2, respectively. After 109 cycles, the remaining remnant polarizations of Bi4-xLaxTi3O12 films with x = 0, 0.25, 0.50, 0.75, and 1.00 were 64.9, 69.5, 75.9, 94.8, and 95.0%, respectively. Considering the surface microstructure and ferroelectric properties of the BLT films, the BLT film with x = 0.75 showed the best microstructure and ferroelectric properties among all the BLT films. These results suggest the possible application of ferroelectric BLT film, relatively easily and without high cost process such as dry etching.


Keyword:
BLT, Photochemical reaction, Direct-patterning, Photoresist-free

Received: October 30, 2008
Accepted: February 19, 2009 , Published online: May 01, 2009
Copyright (c) 2009 The Ceramic Society of Japan

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