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Stability of Postannealed Silicon Dioxide Electret Thin Films Prepared by Magnetron Sputtering
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Tadatsugu Minami1), Hidenobu Toda1), Tetsuharu Utsubo1), Toshihiro Miyata1) and Yoshiaki Ohbayashi2)
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1) Optoelectronic Device System Research & Development Center, Kanazawa Institute of Technology
2) Technical & Research Division, Hosiden Corporation
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The effect of postannealing on surface potential stability was investigated for silicon dioxide (SiO2) electret thin films with a thickness of 2 to 5 \micron. The SiO2 films were prepared on Al-coated and uncoated Si substrates by r.f. magnetron sputtering using a fused quartz target. Subsequent to the sputter deposition, the SiO2 films were postannealed in the deposition chamber in order to improve stability for use in a highly humid atmosphere. The obtained surface potential stability was dependent on not only the postannealing conditions but also the deposition conditions. The surface potential of SiO2 films postannealed in an oxidizing atmosphere at 275 to 350°C for 10 to 60 min was found to be highly stable when tested at a relative humidity of 90% and a temperature of 60°C. In addition, the postannealed SiO2 films were stable for use in air for a long term at room temperature.
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Keyword: electret, thin film, silicon dioxide, magnetron sputtering, postannealing, high surface potential stability, high relative humidity
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Received: December 27, 2001
Accepted: April 15, 2002 ,
Published online: September 06, 2005 |
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Copyright (c) 2005 The Japan Institute of Metals |
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