You are not logged in Total: 7journals, 20,388articles Online
Login / Register
Forgot Login?
Main menuMain menu
What's new
Journal list
Visiting ranking
Phrase ranking
About us
Journal Site
Advanced Search

Home  >  Journal list  >  Journal of the Ceramic Society of Japan  >  Vol.118  No.1380 (August) (2010)  >  pp.669-673

Journal of the Ceramic Society of Japan
<<Previous article Vol.118  No.1380 (August) (2010)   pp.669 - 673 Next article>>

Effect of bottom electrode structure on electrical properties of BaTiO3 thin films fabricated by CSD method

Naonori SAKAMOTO1), Haruna YOSHIOKA1), Junpei SUZUKI2), Toshimasa SUZUKI2), Naoki WAKIYA1) and Hisao SUZUKI3)
1) Department of Materials Science and Chemical Engineering, Shizuoka University
2) Taiyo Yuden Co Ltd, R&D Center
3) Graduate School of Science and Technology, Shizuoka University

  BaTiO3 (BT) based perovskite films are expected as ferroelectric and piezoelectric materials alternating Pb(Zr,Ti)O3 (PZT) films which involve toxicity of the lead. In the present study, we focus effects of bottom electrode structures on electrical properties of the BT films fabricated by Chemical Solution Deposition (CSD) method. The BT films were fabricated on 1–6 layered LaNiO3 (LNO) bottom electrode on Si or Pt/Ti/SiO2/Si substrate. The dielectric constant of the BT films fabricated on LNO/Pt/Ti/SiO2/Si substrate showed higher values than that on the LNO/Si substrate. The dielectric constant and piezoelectric properties increased with increasing layer numbers of the LNO. The microstructure and crystal structure of the BT films was studied by means of X-ray diffraction, scanning electron microscopy (SEM), and scanning transmission electron microscopy (STEM).

BaTiO3, LaNiO3, Thin film, Ferroelectric, Bottom electrode

Received: May 24, 2010
Accepted: July 15, 2010 , Published online: August 01, 2010
Copyright (c) 2010 The Ceramic Society of Japan



Terms of Use | Privacy Policy