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Home  >  Journal list  >  Journal of the Society of Materials Science, Japan  >  Vol.59  No.9 (2010)  >  pp.690-693

Journal of the Society of Materials Science, Japan
<<Previous article Vol.59  No.9 (2010)   pp.690 - 693 Next article>>

Photoluminescence Properties of Eu-Doped ZnO Grown by Sputtering-Assisted Metalorganic Chemical Vapor Deposition

Yoshikazu TERAI1), Kazuki YOSHIDA1) and Yasufumi FUJIWARA1)
1) Division of Materials and Manufacturing Sci., Graduate School of Eng., Osaka Univ.


Photoluminescence (PL) properties of Eu-doped ZnO (ZnO:Eu) grown by a sputtering-assisted metalorganic chemical vapor deposition technique were investigated. In PL measurements at 300K, the samples annealed at 600°C for 30min showed clear red-emission lines due to the intra-4f shell transition of 5D07FJ (J = 2, 3) in Eu3+. In photoluminescence excitation (PLE) spectra, the PL were observed under the high-energy excitation above the band-gap energy of ZnO (indirect excitation) and the low-energy excitation resonant to the energy levels of 7F0-5D3 and 7F0-5D2 transitions in Eu3+ (direct excitation). These results revealed that the energy transfer from ZnO host to Eu3+ was accompanied under indirect excitation in ZnO:Eu.


Keyword:
Rare-earth doped semiconductors, MOCVD, ZnO, Intra-4f shell transition in Eu3+, Photoluminescence

Received: January 15, 2010
Published online: September 18, 2010
Copyright (c) 2010 by The Society of Materials Science, Japan

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