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Home  >  Journal list  >  MATERIALS TRANSACTIONS  >  Vol.45  No.7 (2004)  >  pp.2091-2098

<<Previous article Vol.45  No.7 (2004)   pp.2091 - 2098 Next article>>

Electron Energy-loss Spectroscopy Characterization of ∼1 nm-thick Amorphous Film at Grain Boundary in Si-based Ceramics

Hui Gu1)
1) State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences

In many ceramic systems thin amorphous films of about 1 nm thickness often cover grain boundaries. These amorphous films play a key role not only in the formation of microstructures but also in the thermal-mechanical properties of ceramic materials. However, such thin amorphous layers could not be probed directly by an analytical electron beam. With the recent advances in spatially-resolved electron energy-loss spectroscopy technique, chemical and physical parameters of the thin films could be successfully derived using the “spectrum separation” approach. Basic characters and behaviors of variations for the inter-granular films are analyzed in a few silicon nitride (Si3N4) and silicon carbide (SiC) systems. The combined local chemical-structural information reveal new trends on microstructures and properties, and provides further insights in Si-based ceramic materials.

silicon nitride, silicon carbide, grain boundary, inter-granular amorphous film, electron energy-loss spectroscopy (EELS)

Received: February 13, 2004
Accepted: April 22, 2004 , Published online: June 24, 2005
Copyright (c) 2005 The Japan Institute of Metals



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