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Home  >  Journal list  >  Journal of the Ceramic Society of Japan  >  Vol.122  No.1421 (January) (2014)  >  pp.63-66

Journal of the Ceramic Society of Japan
<<Previous article Vol.122  No.1421 (January) (2014)   pp.63 - 66 Next article>>

Preparation of lanthanum strontium cobalt oxide electrode on a Si wafer for stress engineering of ferroelectric thin films

Tomoya OHNO1), Hiroshi YANAGIDA1), Hisao SUZUKI2), Takeshi MATSUDA1)
1) Department of Materials Science, Kitami Institute of Technology 2) Research Institute of Electronics, Shizuoka University

The precursor solution for lanthanum strontium cobalt oxide (LSCO) was modified to increase the single-layer film thickness. Results show that LSCO with 170 nm thickness was deposited on a Si wafer for stress engineering of a ferroelectric thin film. The single-layer film thickness for LSCO layer increased concomitantly with increasing viscosity in LSCO precursor solution. In addition, the crystallinity and the electrical resistivity of a LSCO with lanthanum nickel oxide (LNO) seeding layers using the modified LSCO precursor solution was nearly equal to that of the reported LSCO precursor solution. The residual stress in lead zirconate titanate with Zr/Ti = 53/47 composition thin film on a LSCO(170 nm)/LNO(160 nm)/Si stacking structure was −0.9 GPa compressive stress, which enhances the ferroelectric property (2Pr = 120 µC/cm2).


Keyword:
Stress engineering, Ferroelectric thin film, Chemical solution deposition, Metal oxide electrode

Received: July 30, 2013
Accepted: November 15, 2013 , Published online: January 01, 2014
Copyright © 2014 The Ceramic Society of Japan

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