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Home  >  Journal list  >  Journal of the Ceramic Society of Japan  >  Vol.125  No.6 (June) (2017)  >  pp.516-519

Journal of the Ceramic Society of Japan
<<Previous article Vol.125  No.6 (June) (2017)   pp.516 - 519 Next article>>

Synthesis of SiC layer on metal silicon from SiO by a chemical vapor deposition process

Norihiro MURAKAWA1), Tomonori IIZUKA1), Masanori EGUCHI2), Kohei TATSUMI1)
1) Waseda University, Faculty of Science and Engineering 2) Fuzzy Logic Systems Institute

A new process for forming an SiC layer is proposed in which a surface of metal silicon is exposed to gaseous SiO and a gaseous carbon compound at around 1400°C, thereby an SiC layer is formed substantially only on the surface of metal silicon. The resulting SiC layer is of crystalline cubic SiC and a few tens µm in thickness. We consider that the carbon of the SiC layer derives from the gaseous carbon compound and the gaseous SiO promotes the formation of the SiC layer, therefore this process for forming the SiC layer can be defined as one of chemical vapor deposition processes.


Keyword:
SiC, Coating, SiO, CVD, Polysilicon, Silicon single crystal

Received: February 26, 2017
Accepted: April 05, 2017 , Published online: June 01, 2017

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