You are not logged in Total: 7journals, 20,314articles Online
AccountAccount
Login / Register
Forgot Login?
 
Main menuMain menu
What's new
Journal list
Visiting ranking
Phrase ranking
Polls
About us
 
SearchSearch
 
Journal Site
Advanced Search
 

Home  >  Journal list  >  MATERIALS TRANSACTIONS  >  Vol.43  No.8 (2002)  >  pp.2157-2160

MATERIALS TRANSACTIONS
<<Previous article Vol.43  No.8 (2002)   pp.2157 - 2160 Next article>>

High-Strength and High-Speed Bonding Technology using Thick Al-Ni Wire

Jin Onuki1), Takao Komiyama1), Yasunori Chonan1) and Masahiro Koizumi1)
1) Department of Electronics and Information Systems, Faculty of Systems Science and Technology,Akita Prefectural University

In order to create high-strength and high-speed thick Al wire bonding technology, high-temperature bonding at 423 K using Al–Ni wire has been investigated. It was found that Al–Ni wire bonds exhibit higher bonding strength than those of Al wire bonds. Al–Ni wire bonds joined at 423 K for 40 ms exhibited high-strength comparable to those of Al–Ni wire bonds joined at RT for 180 ms. It was found that high-temperature, high-speed bonding substantially reduces the occurrence of Si damage. High-temperature and high-speed bonding with Al–Ni wire can be considered as a promising bonding technology for the mass production of low cost power modules.


Keyword:
thick aluminum wire bonding, aluminum-nickel wire, high temperature bonding, high speed bonding, shear strength, silicon chip damage

Received: June 04, 2002
Accepted: July 10, 2002 , Published online: September 06, 2005
Copyright (c) 2005 The Japan Institute of Metals

PDFPDF file (J-STAGE)J-STAGEJ-STAGE


SPARC Japan

Terms of Use | Privacy Policy