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Home  >  Journal list  >  Science and Technology of Advanced Materials  >  Vol.7  No.S1 (2006)  >  pp.S2-S6

Science and Technology of Advanced Materials
<<Previous article Vol.7  No.S1 (2006)   pp.S2 - S6 Next article>>

High-pressure synthesis and characterization of superconducting boron-doped diamond

E.A. Ekimova, V.A. Sidorova, A.V. Rakhmaninaa, N.N. Mel’nikb, R.A. Sadykova and J.D. Thompsonc
aVereshchagin Institute for High Pressure Physics, Russian Academy of Sciences, 142190 Troitsk, Moscow region, Russian Federation
bLebedev Physics Institute, Russian Academy of Sciences, 117924 Moscow, Russian Federation
cLos Alamos National Laboratory, Los Alamos, NM 87545, USA

Microcrystalline powders of boron-doped diamond were produced in the C–H–B system under a pressure of 8 GPa and at a temperature of more than 2000 K. The presence of boron in the C–B–H system was shown to decrease the temperature–pressure parameters for diamond synthesis compared with those for the binary C–H system (naphthalene). A decrease in the parameters for synthesis in the system with boron may be due to the formation of graphite with less perfect crystal structure during an intermediate stage of diamond formation. Superconducting diamond microcrystals are synthesized in the C–H–B system with boron content of about 5–10 at% in a mixture with naphthalene. Superconductivity below 3.5 K in boron-doped diamond powder is detected in AC magnetic susceptibility measurements.

Diamond; Boron; Doping; Synthesis; Superconductivity; Pressure

Note  Special Issue: 'Superconductivity in Diamond and Related Materials'

Received: December 08, 2005 , Revised: February 15, 2006
Accepted: March 08, 2006 , Published online: July 25, 2006
Copyright © 2006 NIMS and Elsevier Ltd All rights reserved.



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